James Robert Biard, Ph.D.
Chief Scientist - Retired
Honeywell MICRO SWITCH Division
Home Address: Business Address:
207 Martha Manor Honeywell MICRO SWITCH
Home Telephone: Work Telephone:
(972) 235-6532 (972) 470-4203
(972) 235-6532 (FAX) (972) 470-4278 (FAX)
Marital Status: Married, 3 Children, 10 Grandchildren
Institution Location Date Degree
Tau Beta Pi, Eta Kappa Nu, Phi Kappa Phi, Sigma Xi, American Physical Society, Fellow of IEEE, and member National Academy of Engineering.
Dr. J. R. (Bob) Biard became Chief Scientist of the
Honeywell MICRO SWITCH Division in 1987.
In the course of his technical career, Dr. Biard has published more than two dozen technical papers and made about the same number of unpublished presentations at major technical conferences. He also developed a one-week seminar on Fiber Optic Data Transmission that he presented on five occasions in various parts of the U.S.. Some of the key papers are listed below:
W. T. Matzen and J. R. Biard, Differential Amplifier Features D-C Stability," Electronics, January 16, 1959.
J. R. Biard, E. L. Bonin, W. N. Carr, and G. E. Pittman, "GaAs Infrared Source," PGED Electron Device Conference, Washington, D.C.; October 1962.
J. R. Biard, "Low frequency Reactance Amplifier," IEEE Proc., Vol. 51, No. 2, pp. 298-303; February, 1963.
W. N. Carr, and J. R. Biard, "Common Occurrence of Artifacts or 'Ghost' Peaks in Semiconductor Injection Electroluminescence Spectra," Journal of Applied Physics, Vol. 35, No. 9, pp. 2776-2777; September, 1964.
J. R. Biard, "Degradation of Quantum Efficiency in GaAs Light Emitters," GaAs: 1966 Symposium Proceedings, (Reading England, September 1966), Institute of Physics and Physical Society, pp. 113-117.
Ralph H. Johnson, Brian W. Johnson, and J. R. Biard, "Unified Physical DC and AC MESFET Model for Circuit Simulation and Device Modeling." IEEE Electron Devices Transactions, September, 1987.
Ananth Ramaswamy, Jan P. van der Ziel, J. Robert Biard, Ralph Johnson, and Jim A. Tatum, ˇ°Electrical Characteristics of Proton-Implanted Vertical-Cavity Surface-Emitting Lasers,ˇ± IEEE Journal of Quantum Electronics, Vol. 34, No. 11; November, 1998.
Dr. Biard holds 35 U.S. and 17 foreign patents; several other patents are pending. Five of his more significant patents are listed below. These patents include one of the first transistor DC differential amplifiers, the GaAs light emitting diode, the optical isolator, Schottky clamped logic circuits, and the MOS read only memory (ROM).
U.S. Patent No. 3,046,487, "Differential Transistor Amplifier,ˇ± J. R. Biard and W. T. Matzen; July 24, 1962.
U.S. Patent No. 3,293,513, "Semiconductor Radiant Diode,ˇ± J. R. Biard and G. E. Pittman; December 20, 1966.
U.S. Patent No. 3,304,431, "Photosensitive Transistor Chopper,ˇ± J. R. Biard, E. L. Bonin, and J. S. Kilby; February 14, 1967.
U.S. Patent No. 3,463,975, "Unitary Semiconductor High-Speed Switching Device Using a Barrier Diode," J. R. Biard; August 26, 1969.
U.S. Patent No. 3,541,543, "MOS Binary Decoder,ˇ± R. H. Crawford and J. R. Biard; May 20, 1969.