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The PIs have created a laboratory at SMU that features a
laser-based thermo-reflectance measurement system, a microwave
integrated circuit scalar performance electrical measurement system,
and an adaptive thermal numerical solution technique. These
capabilities are essential to the successful execution of the proposed
work. The collection of the experimental measurements requires
the use of both a thermal properties measuring system (TTR) and
temperature experimental system (STR), while the
reduction of the experimental measurements will require the use of the
adaptive numerical technique. The adaptive numerical technique will be
used to calculate the thermal properties of thin films from measured
surface reflectance data as well as to infer the thermal behavior of
embedded features by solving the inverse heat transfer problem
associated with multilayered integrated circuits. There are five
distinct, but related, experimental objectives in our work:
- Perfect the laser-based thermo-reflectance
technique for the
measurement of both in-plane and through-plane thermal properties of
semiconductors and insulators.
- Measure the transient surface reflectance and
calculate the thermal
properties of a wide array of submicron thin-film materials used in
high performance ICs, IR detectors, and TECs.
- Extend the laser-based technique in objective No. 1
to the
measurement of the thermal properties of optically transparent
dielectric materials by using a novel approach that involves:
- covering the dielectric material with a
thin-film metallic surface,
- measuring the optical reflectance of the top
metallization layer, and
- solving an inverse heat transfer problem.
Consequently, the thermal properties of the embedded dielectric
material will be inferred.
- Develop the ability to use the laser-based
thermo-reflectance
technique for the simultaneous measurement of junction temperatures and
electrical performance characteristics of active ICs, using, in the
first instance, high-frequency, microwave integrated circuits or MMICs.
- Measure the channel temperature of active HFET and
pHEMT MMICs,
while characterizing their scalar electrical performance (i.e. gain and
output power).
- Acquire the components and build a femtosecond
measuring system to make possible the measurement of metallic
thin-films.
- Create a thermal advisor for the analysis and design
of complex microelectronic devices. The advisor combines both
experimental and numerical components that enable the design of better,
faster, moere reliable devices whiel helping shorthen the design cycle
time.
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